Impact of Zinc Oxide on the Structural and Dielectric Properties of NiO/ZnO Composites
Keywords:
XRD of NiO/ZnO composites, a.c conductivity, density of states at Fermi levelAbstract
The a.c conductivity and dielectric properties of the prepared composites NiO:ZnO composites samples with various mixing ratios (100:0,80:20,60:40,40:60,20:80 and 0:100) wt. % were carried out . The structure phase, the crystallite size and purity of the fabricated NiO:ZnO composites were confirmed using x-ray diffraction pattern. The results declared that the diffraction spectrum of composites samples were compatible with cubic and hexagonal structures phases for 100%NiOand ZnO respectively while the spectrum were compatible with both phases for the residual composites samples. The crystallite size of the most pronounced plane (101) for crystal growth was changed from 23 nm to 49 .4 nm by increasing of mixing ratio of ZnO from 0 to 100wt%. The dielectric properties were studied as function of frequency in the range (50-50x106Hz). The a.c conductivity σa.c(ω) showed power low dependence for the full frequency range except the composite’s samples 40, 60 %wt. ZnO where there was d.c region in low frequency region range. The exponent (s) values get to change in non-regular sequence as a result of the increasing of ZnO ratio. The real and imaginary dielectric constant ε1 and ε2 were found to increase in non-regular sequence by continuous addition of ZnO to the host oxide. The potential barrier (Wm)for hopping was found to reduce while the density of states at Fermi level N(Ef)was found to increase non- systematically by increasing of ZnO ratio. The values of polarizability (α) were calculated and explained.
Downloads
References
R. Kanno, in Encyclopedia of Electrochemical Power Sources, 2009
Qian L, Liu Z, Mo Y, Yuan H and Xiao D 2013 Mater. Lett. 100, 124–126.
Wang Z L ACS Nano 2008 2 1987–92
M.V. Kumar, T.G. Raja, N. Selvakumar, K. Jeyasubramanaian, this copy is for personal use only-distribution prohibited, Journal of References 95 Achievements in Materials and Manufacturing Engineering, 79 (2016) 13-18.
Pollack M and Geballe T H 1961 Phys. Rev. 122 1742
Ramana C V, Hussain O M, Naidu S S and Julien C 1999 Mater. Sci. Eng. B 60 173
S.R. Elliott, Philos. Mag. 36, 1291 (1977).
M. Kastener, H. Fritzsche, Philos. Mag. B 37, 199 (1978).
M. Kastener, in: Proc. 7th Int. Conf. of Amorphous and Liquid Semiconductors, Ed. W.E. Spear, Edinburgh University 1977, p. 504.
A.E. Streen, H. Eyring, J. Chem. Phys. 5, 113 (1937).
J.C. Giuntini, J.V. Zanchetta, D. Jullien, R. Enolie, P. Houenou, J. Non-Cryst. Solids 45, 57 (1981).
S.C. Agarwal, S. Guha, K.L. Narasimhan, J. Non- -Cryst. Solids 18, 429 (1975).
M. Pollak, G.E. Pike, Phys. Rev. Lett. 25, 1449 (1972).
S. Asokan, M.V.M. Prassad, G. Parathasarathy, E.S.R. Gopal, Phys. Rev. Lett. 62, 808 (1989).
M. Barsoum, Fundamentals of Ceramics, Mc Graw- -Hill, New York 1977, p. 543.
N.F. Mott, E.A. Davis, R.A. Streel, Philos. Mag. 32, 961 (1975).
M. Pollak, G.E. Pike, Phys. Rev. Lett. 28, 1494 (1972).
S.R. Elliott, Solid State Commun. 27, 749 (1978).
Ahmad A. Hasan, Iraqi Journal of Science, 2021, Vol. 62, No. 3, pp: 861-870 DOI: 10.24996/ijs.2021.62.3.17
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
All papers should be submitted electronically. All submitted manuscripts must be original work that is not under submission at another journal or under consideration for publication in another form, such as a monograph or chapter of a book. Authors of submitted papers are obligated not to submit their paper for publication elsewhere until an editorial decision is rendered on their submission. Further, authors of accepted papers are prohibited from publishing the results in other publications that appear before the paper is published in the Journal unless they receive approval for doing so from the Editor-In-Chief.
IJISAE open access articles are licensed under a Creative Commons Attribution-ShareAlike 4.0 International License. This license lets the audience to give appropriate credit, provide a link to the license, and indicate if changes were made and if they remix, transform, or build upon the material, they must distribute contributions under the same license as the original.
