Cavity Length Effects on Performances of InGnAsP/InP Multiple Quantum Well Laser Diode
Keywords:
Downsizing, multi-quantum well laser, rate equations, telecommunication wavelengthAbstract
Software has been developed using the MATLAB language to analyze laser diode having the architecture InGaAsP/InP .The cavity length of active region of multi quantum well semiconductor laser effect on threshold current, quantum efficiency and optical output power of InGaAsP/InP and separate confinement heterostructure (SCH) is investigated. High-speed communication systems, especially those that use optical fiber communication for high-speed data transmission, use lasers with a wavelength of 1.55 µm. here, the performance of changing the cavity length values of active region between 250 to 500 µm at room temperature is study in this work. The characteristics power–current and related features, threshold current and slope efficiency have been investigated. The threshold current decreases with increase of cavity lengths because the carrier density in the quantum well is very high. This effect is particularly pronounced in the shortest cavity measured (250µm), we extractIth=6.25ma,αi=30mA and ηd=63%. These modifications show that our proposed structure is better compared to the GaInP/GaAs 5QW laser structure (Ith=360mA and ηd=51%).
Downloads
References
2nd ed.,C. C. Davis, Lasers and Electro-Optics. New York, NY, USA: Cambridge University Press Cambridge, 2014, pp.867.
4th ed., J. Hecht, Understanding lasers : an entry-level guide, Wiley-IEEE Press, 2018.
6thed.,A. Yariv and P. Yeh, Photonics: optical electronics in modern communications. Oxford Series in Electrical and Computer Engineering, 2007.
R. Joko Hussin and I. B. Karomi, “Ultrashort cavity length effects on the performance of GaInP multiple-quantum-well laser diode,” Results Opt., vol. 12, p. 100452, Jul. 2023, doi: 10.1016/J.RIO.2023.100452.
R. Yadav, P. Lal, F. Rahman, S. Dalela, and P. A. Alvi, “Well Width Effects on Material Gain and Lasing Wavelength in InGaAsP / InP Nano-Heterostructure,” J. Optoelectron. Eng., vol. 2, no. 1, pp. 1–6, Jan. 2014, doi: 10.12691/JOE-2-1-1.
A. G. Rzhanov, “Semiconductor laser and optical amplifier modeling,” Bull. Russ. Acad. Sci. Phys., vol. 82, no. 1, pp. 1–5, Jan. 2018, doi: 10.3103/S1062873818010185/METRICS.
M. Lahoual, A. Gueddim, and N. Bouarissa, “Numerical Study of Strained GaAs1−xNx/GaAs Quantum-Well Laser,” Trans. Electr. Electron. Mater., vol. 20, no. 4, pp. 344–349, Aug. 2019, doi: 10.1007/S42341-019-00123-9/METRICS.
A. Menani, L. Dehimi, L. Dehimi, S. Dehimi, and F. Pezzimenti, “Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode,” J. Semicond., vol. 41, no. 6, p. 062301, Jun. 2020, doi: 10.1088/1674-4926/41/6/062301.
L. Bjerkan, A. Røyset, L. Hafskjær, and D. Myhre, “Measurement of laser parameters for simulation of high-speed fiberoptic systems,” J. Light. Technol., vol. 14, no. 5, pp. 839–850, May 1996, doi: 10.1109/50.495166.
G. Based, M. Q. W. Red, and K. F. Nasrin, “Effects of Variation of Injection Current , Differential Gain and Injection Current Efficiency on the Modulation Performance of a,” Int. J. Multidiscip. Sci. Eng., vol. 4, no. 1, pp. 1–7, 2014, doi: 10.37591/toeoc.v4i1.1830.
H. E. Kotb and D. Khalil, “Multiple quantum well laser diode parameter extraction using the im response,” EUROCON 2007 - Int. Conf. Comput. as a Tool, pp. 1256–1262, 2007, doi: 10.1109/EURCON.2007.4400430.
S. A. Sayid et al., “Thermal performance of 1.55μm InGaAlAs quantum well buried heterostructure lasers,” Conf. Proc. - Int. Conf. Indium Phosphide Relat. Mater., pp. 265–268, 2010, doi: 10.1109/ICIPRM.2010.5516088.
2nd ed.,M. L. M. Larry A. Coldren, Scott W. Corzine, Diode Lasers and Photonic Integrated Circuits. John Wiley & Sons, Inc., 2012.
J. B. Khurgin and M. A. Noginov, “How Do the Purcell Factor, the Q-Factor, and the Beta Factor Affect the Laser Threshold?,” Laser Photon. Rev., vol. 15, no. 3, p. 2000250, Mar. 2021, doi: 10.1002/LPOR.202000250.
Yang and Chi, “1.55 um aluminum gallium indium arsenide strained MQW laser diodes,”Ph.D.dissertation, The University of New Mexico,NM,USA,
J. Piprek, P. Abraham, and J. E. Bowers, “Cavity length effects on internal loss and quantumefficiency of multiquantum-well lasers,” IEEE J. Sel. Top. Quantum Electron., vol. 5, no. 3, pp. 643–647, May 1999, doi: 10.1109/2944.788430.
M. A. Al Humayun, M. A. Rashid, A. Kuwana, and H. Kobayashi, “Improvement of Absorption and Emission Phenomena of 1.55µm Quantum Dot Laser using Indium Nitride,” Eng. Technol. Appl. Sci. Res., vol. 13, no. 1, pp. 10134–10139, Feb. 2023, doi: 10.48084/ETASR.5512.
Downloads
Published
How to Cite
Issue
Section
License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.
All papers should be submitted electronically. All submitted manuscripts must be original work that is not under submission at another journal or under consideration for publication in another form, such as a monograph or chapter of a book. Authors of submitted papers are obligated not to submit their paper for publication elsewhere until an editorial decision is rendered on their submission. Further, authors of accepted papers are prohibited from publishing the results in other publications that appear before the paper is published in the Journal unless they receive approval for doing so from the Editor-In-Chief.
IJISAE open access articles are licensed under a Creative Commons Attribution-ShareAlike 4.0 International License. This license lets the audience to give appropriate credit, provide a link to the license, and indicate if changes were made and if they remix, transform, or build upon the material, they must distribute contributions under the same license as the original.
